Texas Instruments

CSD25304W1015T

Description :
MOSFET P-CH 20V 3A 6DSBGA
Current - Continuous Drain (Id) @ 25°C :
3A (Ta)
Drain to Source Voltage (Vdss) :
20V
Drive Voltage (Max Rds On, Min Rds On) :
1.8V,4.5V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
595pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
6-UFBGA,DSBGA
Packaging :
-
Power Dissipation (Max) :
750mW (Ta)
Rds On (Max) @ Id, Vgs :
32.5mOhm @ 1.5A,4.5V
Series :
NexFET
Supplier Device Package :
6-DSBGA
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±8V
Vgs(th) (Max) @ Id :
1.15V @ 250μA

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