STMicroelectronics

STD80N10F7

Description :
MOSFET N-CH 100V 70A DPAK
Current - Continuous Drain (Id) @ 25°C :
70A (Tc)
Drain to Source Voltage (Vdss) :
100V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3100pF @ 50V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-252-3,DPak (2 Leads + Tab),SC-63
Packaging :
Cut Tape (CT)
Power Dissipation (Max) :
85W (Tc)
Rds On (Max) @ Id, Vgs :
10mOhm @ 40A,10V
Series :
DeepGATE,STripFET VII
Supplier Device Package :
DPAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 250μA

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