ON Semiconductor

FDC6301N

Description :
MOSFET 2N-CH 25V 0.22A SSOT6
Package :
SuperSOT?-6
Current - Continuous Drain (Id) @ 25°C :
220mA
Drain to Source Voltage (Vdss) :
25V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
9.5pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
SOT-23-6 Thin,TSOT-23-6
Packaging :
Tape & Reel (TR)
Power - Max :
700mW
Rds On (Max) @ Id,Vgs :
4 Ohm @ 400mA,4.5V
Series :
-
Supplier Device Package :
SuperSOT?-6
Vgs(th) (Max) @ Id :
1.5V @ 250μA

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