Infineon Technologies

BSC072N08NS5ATMA1

Description :
MOSFET N-CH 80V 74A 8TDSON
Current - Continuous Drain (Id) @ 25°C :
74A (Tc)
Drain to Source Voltage (Vdss) :
80V
Drive Voltage (Max Rds On, Min Rds On) :
6V,10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2100pF @ 40V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerTDFN
Packaging :
-
Power Dissipation (Max) :
2.5W (Ta),69W (Tc)
Rds On (Max) @ Id, Vgs :
7.2mOhm @ 37A,10V
Series :
OptiMOS
Supplier Device Package :
PG-TDSON-8-7
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3.8V @ 36μA

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